| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a wide uniform control range of plasma processing, whose side effect such as CD nonuniformity by depository does not happen easily. <P>SOLUTION: The plasma processing apparatus is arranged to counter a chamber 10 each other, having an upper electrode 34 consisting of an outer electrode 34a and an inner electrode 34b, and a lower electrode 16 to support a wafer. The lower electrode 16 is connected with: a first high-frequency power supply 89 that applies first high-frequency power of 40 MHz, a second high-frequency power supply 90 that applies second high-frequency power supply of 3.2 MHz, a first DC voltage application circuit 47a and a second DC voltage application circuit 47b that apply a DC voltage to the outer electrode 34a and the inner electrode 34b, respectively. Frequency-impedance characteristics in the outer electrode 34a when the upper electrode 34 is seen from the side of plasma generation space are: Impedance reduces at 40 MHz and increases at 3.2 MHz, as DC voltage applied on the outer electrode 34a increases. <P>COPYRIGHT: (C)2009,JPO&INPIT |
