| 摘要 |
PROBLEM TO BE SOLVED: To prevent a silicide layer from being formed on a semiconductor substrate, even when a charge accumulating layer is separated in a channel direction. SOLUTION: A semiconductor device includes: bit lines 12 provided so as to extend in the semiconductor substrate 10; a gate insulation film 20 provided on the semiconductor substrate 10 in a center portion between the bit lines 12 so as to extend in the extending direction of the bit lines 12; the charge accumulating layer 26 provided on the semiconductor substrate 10 so as to extend in the extending direction of the bit lines 12 so that the gate insulation film 20 is sandwiched in the direction of the width of the bit lines 12; a first insulation film 42 provided on the gate insulation film 20 and consisting of a material different from that of the gate insulation film 20; a word line 14 provided on the charge accumulating layer 26 and on the first insulation film 42 and extended so as to cross the bit lines 12; and the silicide layer 22 provided on the upper portion of the word line 14. Also, a method is provided for manufacturing the semiconductor device. COPYRIGHT: (C)2009,JPO&INPIT
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