| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for improving production yield and product reliability in a semiconductor device having a triple-well structure. SOLUTION: The semiconductor device includes an n-channel type field effect transistor 254n formed in a p-type well 252 in a deep n-type well 200 formed in a p-type substrate 1, and a p-channel type field effect transistor 254p formed in a shallow n-type well 251. An inverter circuit INV1 that does not contribute to circuit operation is formed. A shallow p-type well 252 is connected to the substrate 1 using a first interconnect 253(M1). The gate electrode of a p-channel type field effect transistor 254p and n-channel type field effect transistor 254n are connected to a shallow n-type well 251 using an uppermost interconnect 255(M8). COPYRIGHT: (C)2009,JPO&INPIT
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