| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of emitting a plurality of laser beams of different wavelengths and reducing its manufacturing cost. SOLUTION: First and second double-hetero structures are formed on an n-type GaAs substrate 1 by a crystal growth process. The first and second double-hetero structures share an n-type AlGaInP first clad layer 3. The first double-hetero structure contains an AlGaAs-based MQW active layer 5 and a p-type AlGaInP second clad layer 6. The second double-hetero structure contains an AlGaInP-based MQW active layer 12 and a p-type AlGaInP fourth clad layer 13. The AlGaAs-based MQW active layer 5 is different from the AlGaInP based MQW active layer 12 in layer thickness, material, and carrier density. COPYRIGHT: (C)2009,JPO&INPIT
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