发明名称 GAS CLUSTER ION BEAM MACHINING METHOD AND MACHINING CONTROL PROGRAM
摘要 PROBLEM TO BE SOLVED: To improve machining accuracy of a workpiece when machining the workpiece while relatively changing an irradiation position which is irradiated with a gas cluster ion beam. SOLUTION: In a gas cluster ion beam machining device 100, a gas cluster ion beam 10 is generated from a gas flow jetted from a nozzle 5 by using a tungsten filament 7, an extraction electrode 8, and an acceleration electrode 9 and irradiated through an aperture 22 to a workpiece 21, which is held by an attitude controller 13, to conduct micro-machining. A distance L (the range of the gas cluster ion beam 10) from the acceleration electrode 9, from which the gas cluster ion beam 10 is emitted, to a machining point of the workpiece 21 is controlled to a constant distance L0 in machining to suppress variations in the machining amount caused by variations in the range of the gas cluster ion beam 10, so that the workpiece 21 is machined with high accuracy. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009190068(A) 申请公布日期 2009.08.27
申请号 JP20080034374 申请日期 2008.02.15
申请人 OLYMPUS CORP 发明人 MORII TAKAHIRO;IMAMURA TOMONORI;SUZUKI MARI;UCHIDA KAZUAKI
分类号 B23K15/00;C23F4/00 主分类号 B23K15/00
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