| 摘要 |
A magneto-resistance effect element comprises: a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer whose magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; a first bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the first bias magnetic layer is magnetized in a direction perpendicular to said air bearing surface; and a pair of second bias magnetic layers provided on respective both sides of said magneto-resistance effect stack in a track width direction, and wherein the second bias magnetic layers are magnetized in a direction substantially parallel to said track width direction; wherein the magnetic pole on a surface of one of said second bias magnetic layers which faces said magneto-resistance effect stack has the same polarity as the magnetic pole on a surface of the other of said second bias magnetic layers which faces said magneto-resistance effect stack, and has a polarity different from the polarity of the magnetic pole on a surface of said first bias magnetic layer which faces said magneto-resistance effect stack.
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