SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A substrate of hexagonal SiC is prepared such that the major surface makes a minimum angle of 1° or less against a face intersecting the (0001) face perpendicularly, e.g. the major surface turns to such a direction as the minimum angle against the [0001] direction perpendicular to the (0001) direction is 1° or less. With such an arrangement, the breakdown voltage can be enhanced sharply as compared with a lateral semiconductor device where the major surface of the hexagonal SiC substrate is turning to a direction along the (0001) direction.