ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

摘要

An atomic layer deposition apparatus comprises a first chamber surrounded by a wall in which a reactive gas supply hole is formed, a second chamber surrounded by a wall in which a material gas supply hole is formed, an antenna array consisting of a plurality of rod antenna elements provided in parallel in the first chamber in order to generate plasma by using the reactive gas, a substrate stage provided in the second chamber for mounting a substrate, and a connection member for connecting the first chamber with the second chamber in order to supply a gas containing radicals generated by the antenna array from the first chamber to the second chamber.