OXIDE PEROVSKITE THIN FILM EL ELEMENT

摘要

Provided is an oxide perovskite thin film EL element which emits red light with a wavelength in the vicinity of 610 nm, which is based on the formation of an oxide perovskite thin film EL element, wherein a hole transport layer/light emitting layer/electron transport layer comprising an oxide perovskite thin film are formed on a lower electrode and an upper electrode is formed on the top, and a display. An oxide perovskite thin film EL element comprises a lower electrode 1 which forms a single crystal polished substrate, an electron transport layer 2 comprising an oxide perovskite thin film which is a dielectric formed as a film on the lower electrode 1, a light emitting layer 3 comprising an oxide perovskite thin film which is formed as a film on the electron transport layer 2, a hole transport layer 4 comprising an oxide perovskite thin film which is a dielectric formed as a film on the light emitting layer 3, a buffer layer 5 which is formed as a film on the hole transport layer 4 and a transparent upper electrode 6 which is formed as a film on the buffer layer 5.