| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element which can be improved in luminous efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: The light-emitting element includes an n-type silicon oxide film 2 and a p-type silicon nitride film 3. The p-type silicon nitride film 3 is formed in contact with the n-type silicon oxide film 2, and the n-type silicon oxide film 2 and p-type silicon nitride film 3 form a p-n junction. The n-type silicon oxide film 2 includes a plurality of quantum dots 21 made of n-type Si. The p-type silicon nitride film 3 includes a plurality of quantum dots 31 made of p-type Si. Electrons are implanted from the side of the n-type silicon oxide film 2 and holes are implanted from the side of the p-type silicon nitride film 3 to emit light on the interface between the n-type silicon oxide film 2 and p-type silicon nitride film 3. <P>COPYRIGHT: (C)2009,JPO&INPIT |
