SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

摘要

A semiconductor device is provided with a semiconductor substrate (10) with an element forming region (12) containing impurities of a first conductivity type, a gate electrode (15) formed on the element forming region (12) with a gate insulating film (14) interposed therebetween, and a silicon mixed crystal layer (22) containing impurities of a second conductivity type formed outside the gate electrode 15 in the element forming region (12). A boundary layer (23) containing the second conductor type impurity is formed in between the silicon mixed crystal layer (22) and the element forming region (12).