DYE-SENSITIZED PHOTOELECTRIC CONVERSION ELEMENT AND ITS MANUFACTURING METHOD, DYE-SENSITIZED PHOTOELECTRIC CONVERSION ELEMENT MODULE AND ITS MANUFACTURING METHOD, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING POROUS SILICA FILM

摘要

PROBLEM TO BE SOLVED: To provide a dye-sensitized photoelectric conversion element and its manufacturing method wherein an antireflection film endures heating in calcination necessary for manufacturing of a dye-sensitized semiconductor layer and it is excellent in its productivity and cost performance and a low reflection ratio is realized at a wide wavelength range of visible light and high photoelectric conversion efficiency is obtained.

SOLUTION: In the dye-sensitized photoelectric conversion element having an electrolyte layer between the dye-sensitized semiconductor layer 2 on one primary plane of transparent conductive substrate 1 and an opposite electrode, a porous silica film is formed on a light-receiving face of the other primary plane of the transparent conductive substrate 1. The porous silica film is formed by drying a solution after forming a silica precursor by adding a surfactant to a composition obtained by making tetramethyl alt silicate and methyl triethoxysilane melt and react to a solvent made of water and alcohol and applying the solution wherein the silica precursor is melted into the solvent to the other primary plane of the transparent substrate.

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