发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an atomic layer deposition device which can improve the uniformity in the film quality and film deposition rate of a film formed on a substrate. SOLUTION: The inside of a film deposition vessel is equipped with a shower head feeding an oxidizing gas from the upper side toward the lower side of the film deposition vessel through a plurality of intermittently provided holes, and a shielding plate suppressing the gas flow of an oxidizing gas fed through the plurality of holes in order from the upper side to the lower side of the film deposition vessel. A plurality of antenna elements in an antenna array are provided between the shower head and the shielding plate so as to be parallel to the face of the substrate stage. The plurality of antenna elements are respectively provided so as to be shifted to the horizontal direction of the film deposition vessel in such a manner that they do not come to the parts directly below the plurality of holes feeding the oxidizing gas in the shower head. The shielding plate is intermittently provided with slits in accordance with the bar shape of the plurality of antenna elements in such a manner that the plurality of antenna elements can be recognized viewed from the substrate stage side. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009191311(A) 申请公布日期 2009.08.27
申请号 JP20080032747 申请日期 2008.02.14
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 MORI YASUNARI
分类号 C23C16/455;C23C16/34;C23C16/40;C23C16/509;H01L21/31 主分类号 C23C16/455
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