CeO2 THIN FILM AND APPARATUS AND METHOD FOR FORMING THE CeO2 THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a CeO2thin film, capable of securing excellent orientation and surface smoothness and increasing deposition rate, the CeO2thin film, and an apparatus for forming the CeO2thin film. SOLUTION: The method for forming the CeO2thin film comprises: a substrate preparation step of preparing an oriented metal substrate; and a deposition step of forming the CeO2thin film on the oriented metal substrate. Here, the deposition rate of the CeO2thin film in the deposition step is≥30 nm/min, and the temperature of the oriented metal substrate in the deposition step is 750-1,100°C. COPYRIGHT: (C)2009,JPO&INPIT