| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor crystal where the high quality semiconductor crystal can be obtained with excellent reproducibility and to provide the semiconductor crystal having homogeneous dislocation density. SOLUTION: The method for growing the semiconductor crystal comprises a raw material melting step that a raw material is melted to a semiconductor molten liquid 34 by heating a vessel 20 housing the seed crystal 30 of a semiconductor and the raw material of the semiconductor, a temperature keeping step that the temperature of an edge 30a of the vessel 20, which exists at a seed crystal 30 side, is kept so as to be lower than that of another edge 20a of the vessel 20, which exists at an opposite side to a side housing the seed crystal 30, and a crystal growing step that the semiconductor molten liquid 34 is gradually solidified from the seed crystal 30 side toward another edge 20a of the vessel 20 by falling the temperature of the semiconductor molten liquid 34 at a state that the falling amount of the temperature of the semiconductor molten liquid 34 at the seed crystal 30 side is smaller than the falling amount of the temperature of the semiconductor molten liquid 34 at another edge 20a side. COPYRIGHT: (C)2009,JPO&INPIT
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