发明名称 SEMICONDUCTOR CHIPS HAVING REDISTRIBUTED POWER/GROUND LINES DIRECTLY CONNECTED TO POWER/GROUND LINES OF INTERNAL CIRCUITS AND METHODS OF FABRICATING THE SAME
摘要 Provided are embodiments of semiconductor chips having a redistributed metal interconnection directly connected to power/ground lines of an internal circuit are provided. Embodiments of the semiconductor chips include an internal circuit formed on a semiconductor substrate. A chip pad is disposed on the semiconductor substrate. The chip pad is electrically connected to the internal circuit through an internal interconnection. A passivation layer is provided over the chip pad. A redistributed metal interconnection is provided on the passivation layer. The redistributed metal interconnection directly connects the internal interconnection to the chip pad through a via-hole and a chip pad opening, which penetrate at least the passivation layer. Methods of fabricating the semiconductor chip are also provided.
申请公布号 US2009212414(A1) 申请公布日期 2009.08.27
申请号 US20090431956 申请日期 2009.04.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JONG-JOO
分类号 H01L23/52 主分类号 H01L23/52
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