The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage (503) to a control gate of a memory cell (505) and to an analog- to-digital converter (ADC) (507). The aforementioned embodiment of a method also includes detecting an output of the ADC (515) at least partially in response to when the ramping voltage causes the memory cell to trip sense circuitry (511).
