| 摘要 |
A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of a first OFET to a first power supply voltage, a second portion for coupling a drain of the first OFET to an output terminal and to a source of a second OFET, and a third portion for coupling a drain of the second OFET to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form a first OFET active area, and for overlapping a portion of the second and third metal layer portions to form a second OFET active area, providing a dielectric layer for overlapping the active area and isolates the first metal layer and semiconductor layer from the second metal layer, and providing a second metal layer for overlapping the active area of the first OFET to form a gate of the first OFET and an input terminal, and for overlapping the active area of the second OFET to form a floating gate for the second OFET. |
