| 摘要 |
Provided are a method of fabricating a polycrystalline silicon thin film using high temperature heat generated by Joule heating induced by application of an electrical field to a conductive layer, which can ensure process stability at high temperature, and thus processing time can be reduced and a polycrystalline silicon thin film having excellent crystallinity can be obtained, a polycrystalline thin film using the method and a thin film transistor including the polycrystalline thin film. The method includes providing a substrate, forming a metal or metal alloy layer having a melting point of 13000C or more on the substrate, forming an insulating layer on the metal or metal alloy layer, forming an amorphous silicon (a-Si) thin film, an amorphous/polycrystalline composite silicon thin film, or a poly-Si thin film on the insulating layer, and applying an electrical filed to the metal or metal alloy layer to induce Joule heating and generate high tem¬ perature heat, and crystallizing and annealing the amorphous silicon (a-Si) thin film, the amorphous/polycrystalline composite silicon thin film, or the poly-Si thin film using the high temperature heat. |
