| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory in which rapid write-in of multi-valued data is achieved. <P>SOLUTION: A semiconductor memory device is provided with a cell array in which memory cells storing resistance values set reversibly as data are arranged, a sense amplifying circuit performing red-out/write-in of data of selection memory cells of a cell array, and a driving circuit generating voltage pulse for writing data. The driving circuit makes the selection memory cell an initial state temporarily, and then, gives a voltage pulse in accordance with the write-in data. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
