| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which improves the efficiency of eliminating a deposition when a contact hole with an aspect ratio of 10 or more is formed. SOLUTION: A contact hole 3 is formed by etching, and then is subjected to light etching with a process gas containing a fluorocarbon gas and overpickling oxygen under no bias application. A reactive product 5 having a C-F bonding and adhering to the sidewall of the hole 3 is eliminated by a plasma process. Subsequently, a deposition 4 remaining on the bottom of the hole 3 is eliminated by a wet process, and then the hole 3 is filled with a conductive material to form a contact plug 7. COPYRIGHT: (C)2009,JPO&INPIT |
