SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus, capable of applying uniform etching processing to the main surface of a substrate. SOLUTION: The substrate processing apparatus 1 includes: a nitrohydrofluoric acid nozzle 5 for supplying nitrohydrofluoric acid to the top surface of a wafer W held in a spin chuck 4; and a DIW(deionized water) nozzle 7 for supplying DIW toward the circumferential edge portion of the top surface of the wafer W held in the spin chuck 4. In etching processing, the nitrohydrofluoric acid nozzle 5 reciprocates while the nitrohydrofluoric acid is jetted from the nitrohydrofluoric acid nozzle 5. Simultaneously with jetting the nitrohydrofluoric acid from the nitrohydrofluoric acid nozzle 5, the DIW for diluting the nitrohydrofluoric acid is jetted to the circumferential edge portion of the top surface of the wafer W. COPYRIGHT: (C)2009,JPO&INPIT