| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily generating a larger current noise. SOLUTION: The semiconductor device 100 includes: a gate electrode 101 formed with a predetermined material; a gate insulating film 103 formed using a predetermined dielectric as covering at least part of the gate electrode; a channel forming region 105 formed using a compound having a trap by impurities and/or failure on the gate insulating film; and a source 107/drain 109 formed in an edge of the channel forming region. The width of the channel forming region is set to the Debye length of a compound having a trap by impurities and/or failure. COPYRIGHT: (C)2009,JPO&INPIT
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