| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma-etching method which prevents the surface and the sidewall of ArF photoresist from being roughened when high anisotropy plasma-etching is performed by applying a high bias voltage, and forms a pattern of a desired shape by controlling occurrence of striation, LER and LWR, and to provide a computer storage medium. SOLUTION: In a plasma-etching method for etching an SiN layer 104 or a silicon oxide layer formed on a substrate to be processed by plasma of processing gas with an ArF photoresist layer 102 as a mask, the processing gas contains at least CF<SB>3</SB>I gas, and a high frequency power having a frequency of 13.56 MHz or less is applied to a lower electrode on which the substrate to be processed is mounted. COPYRIGHT: (C)2009,JPO&INPIT
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