| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor transparent with respect to visible light in which the unevenness of a gate electrode surface which causes the deterioration of characteristics is suppressed, and its manufacturing method. SOLUTION: The thin film transistor is a bottom gate type thin film transistor at least composed of a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode. All members constituting the transistor are transparent with respect to visible light, and at a boundary between the gate electrode and the gate insulating layer a difference between a recessed part and a protruded part in a perpendicular direction of the boundary surface is 30 nm or smaller. COPYRIGHT: (C)2009,JPO&INPIT
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