| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be improved in element isolation breakdown voltage, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has a P-type semiconductor region 1a of a silicon substrate 1, a trench 50 for element isolation formed on a surface of the P-type semiconductor region 1a, a charged insulating film 3b formed to cover the whole inner wall of the trench 50 and negatively charged, a first silicon oxide film 5a buried in the trench 50 covered with the charged insulating film 3b, and a source 6a and a drain 7a, both being an N-type diffusion layer at one end in contact with the trench 50 and formed on the surface of the P-type semiconductor region 1a with the trench 50 interposed therebetween. COPYRIGHT: (C)2009,JPO&INPIT
|
