发明名称 |
MONITORING OF TEMPERATURE VARIATION ACROSS WAFERS DURING PROCESSING |
摘要 |
A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.
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申请公布号 |
US2009215203(A1) |
申请公布日期 |
2009.08.27 |
申请号 |
US20080037531 |
申请日期 |
2008.02.26 |
申请人 |
TEXAS INSTRUMENTS, INC. |
发明人 |
RAMPPA DEEPAK A.;OROZCO-TERAN ROSA A.;MATZ LAURA |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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