RESISTIVE NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURE THEREOF

摘要

Disclosed is a resistive nonvolatile memory element that enables miniaturization and that is equipped with current paths that can be realized by a simple and easy process. The resistive nonvolatile memory element of this invention is characterized by being equipped with a first electrode (203), an oxide semiconductor layer (204a) that is formed on top of the aforementioned first electrode (203) and the resistance of which changes according to the impressed voltage, metallic nanoparticles (204b) that are disposed on top of the aforementioned oxide semiconductor layer (204a) and the grain size of which is from 2 nm to 10 nm, a tunneling barrier layer (204c) that is formed on top of the aforementioned oxide semiconductor layer (204a) and on top of the aforementioned metallic nanoparticles (204b), and a second electrode (206) that is formed on top of the aforementioned tunneling barrier layer (204c), and wherein the aforementioned metallic nanoparticles (204b) and the aforementioned oxide semiconductor layer (204a) are touching.