发明名称 |
WIRING STRUCTURE, INDUCTOR, SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for which the need for increasing the line width of wiring is eliminated, and the size is reduced by eliminating vias. <P>SOLUTION: At a part where a part MT1e of first wiring and a part MT2d of second wiring need to cross, an insulating layer DEb is formed between the part MT1e of the first wiring and the part MT2d of the second wiring; the part of the first wiring is provided in contact with one surface of the insulating layer; and the part of the second wiring is provided in contact with the other surface of the insulating layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009194056(A) |
申请公布日期 |
2009.08.27 |
申请号 |
JP20080031433 |
申请日期 |
2008.02.13 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KOBAYASHI TOMONAGA;HAMA NORIO |
分类号 |
H01L21/822;H01L21/3205;H01L23/12;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|