发明名称 WIRING STRUCTURE, INDUCTOR, SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device for which the need for increasing the line width of wiring is eliminated, and the size is reduced by eliminating vias. <P>SOLUTION: At a part where a part MT1e of first wiring and a part MT2d of second wiring need to cross, an insulating layer DEb is formed between the part MT1e of the first wiring and the part MT2d of the second wiring; the part of the first wiring is provided in contact with one surface of the insulating layer; and the part of the second wiring is provided in contact with the other surface of the insulating layer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009194056(A) 申请公布日期 2009.08.27
申请号 JP20080031433 申请日期 2008.02.13
申请人 SEIKO EPSON CORP 发明人 KOBAYASHI TOMONAGA;HAMA NORIO
分类号 H01L21/822;H01L21/3205;H01L23/12;H01L27/04 主分类号 H01L21/822
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