发明名称 High purity target manufacturing methods
摘要 A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc.
申请公布号 US2009214374(A1) 申请公布日期 2009.08.27
申请号 US20090387134 申请日期 2009.04.28
申请人 TOSOH SMD, INC. 发明人 IVANOV EUGENE Y.
分类号 B22F3/12;B22F3/24 主分类号 B22F3/12
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