| 摘要 |
Disclosed herein are a semiconductor device and a method for manufacturing the same. A method of manufacturing a semiconductor device includes forming a tunnel insulating layer, a first conductive layer, a dielectric layer, a second conductive layer and a gate electrode layer on a semiconductor substrate; patterning the gate electrode layer to expose the second conductive layer; forming a protective layer on a side wall of the gate electrode layer; and etching the exposed second conductive layer, the dielectric layer, and the first conductive layer to form a gate pattern.
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