| 摘要 |
PROBLEM TO BE SOLVED: To reduce the inter-word-line capacitance of a semiconductor storage device. SOLUTION: The semiconductor storage device 70 has an insulating film 9 formed between gates of memory transistors and between the gates of the memory transistor and the gate of a selection transistor with a first gate insulating film 4 interposed. On the insulating film 9, insulating films 10 are provided on gate side surfaces of the memory transistors and a gate side surface of the selection transistor opposed to the gate of the memory transistor. Covering a metal silicide film 10, the insulating film 9, the insulating films 10, an insulating film 12, and an insulating film 13, an insulating film 14 is provided in parallel to the semiconductor substrate 1. A gap portion 11 which has its lower end and side surface shielded by the insulating film 10 and also has its upper end shielded by the insulating film 14 is provided between the gates of the memory transistors and the gate of the memory transistor and the gate of the selection transistor. COPYRIGHT: (C)2009,JPO&INPIT
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