发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an atomic layer deposition device where contamination by particles can be reduced, and further, the cleaning of an antenna array upon maintenance is facilitated as well. SOLUTION: The atomic layer deposition device is provided with: a film growth vessel to be fed with a raw material gas and an oxidizing gas; an antenna array for generating plasma at the inside of the film growth vessel in which a plurality of bar-shaped antenna bodies are parallelly arranged; and a substrate stage to be mounted with a substrate. The antenna array is arranged between the upper wall of the film growth vessel and the substrate stage, so as to be parallel to the substrate stage. A plurality of the antenna bodies are stored inside a storing member made of a dielectric substance in which the face on the side of the film growth vessel is formed so as to be parallel to the face of the substrate stage, and are integrally composed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009191313(A) 申请公布日期 2009.08.27
申请号 JP20080032769 申请日期 2008.02.14
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 MORI YASUNARI
分类号 C23C16/509;C23C16/34;C23C16/40;H01L21/31 主分类号 C23C16/509
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