发明名称 Insulated gate field effect transistors
摘要 A field transistor is divided into a number of cells (6) and includes a separate first gate line (20) connected to first transistor cells (8) and a separate second gate line (22) connected to second transistor cells (10). A drive circuit is used to drive all the cells (6) in a normal, saturated operations state but to drive only the second cells (10) in a linear operations state to reduce the number of cells used in the linear operations state.
申请公布号 US2009212846(A1) 申请公布日期 2009.08.27
申请号 US20050658224 申请日期 2005.07.18
申请人 CUTTER JOHN R 发明人 CUTTER JOHN R.
分类号 H03K17/687;H01L27/02;H01L29/423;H01L29/78 主分类号 H03K17/687
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