发明名称 |
METHOD TO FABRICATE GATE ELECTRODES |
摘要 |
<p>A method for fabricating a semiconductor device comprises depositing a first layer of oxide on at least a portion of a channel of a transistor. The method further comprises depositing a layer of nitride on the first layer of oxide and etching at least a portion of the layer of nitride to the first layer of oxide. The method further comprises depositing a second layer of oxide and planarizing the oxide to expose at least a portion of the layer of nitride. The method further comprises stripping at least a portion of the layer of nitride to create one or more notches and removing at least a portion of the first layer of oxide. The method further comprises depositing a layer of polysilicon, wherein at least a portion of the layer of polysilicon is deposited into at least one of the one or more notches.</p> |
申请公布号 |
WO2009105346(A1) |
申请公布日期 |
2009.08.27 |
申请号 |
WO2009US33209 |
申请日期 |
2009.02.05 |
申请人 |
DSM SOLUTIONS, INC.;BANNA, SRINIVASA, R. |
发明人 |
BANNA, SRINIVASA, R. |
分类号 |
H01L21/337;H01L29/10;H01L29/808 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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