| 摘要 |
Provided is a unit pixel of an image sensor in which photodiodes are arranged in a stacking structure and transfer gates are provided for the respective photodiodes so that signals are sequentially transferred to extract information on a plurality of color components and, by which dark current generated at a substrate surface can be reduced by using a buried-type photodiode. Accordingly, since a buried-type photodiode is used in a unit pixel of an image sensor including a photodiode having a stacking structure, dark current generated by surface detect can be suppressed. In addition, since signals are sequentially transferred through transfer gates for respective photodiodes having a stacking structure, information on a plurality of color components can be extracted without having to use complex peripheral circuits.
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