发明名称 |
NANO OR MICRO SIZED DIODE AND A METHOD FOR PREPARING THE SAME |
摘要 |
A nano or micro size diode and a method for preparing the same are provided to manufacture a diode having uniform quality by including a rectifying layer having a superior p-n junction. A rectifying layer(35) comprises a first electrode(31), a second electrode(33), a first layer(35a), and a second level(35b). The first layer is interposed between the first electrode and the second level. The second level is interposed between the first layer and the second electrode. The second side(35b2) of the first layer has protrusion. A control layer is included between the second electrode and the rectifying layer.
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申请公布号 |
KR20090090853(A) |
申请公布日期 |
2009.08.26 |
申请号 |
KR20080016371 |
申请日期 |
2008.02.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
PARK, SUNG HO |
分类号 |
H01L29/861;B82B1/00;B82B3/00 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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