NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to improve surface morphology of p-nitride semiconductor region by laminating p-doped GaN layer and AlGaN layer alternately. An active layer(106) is formed on the n nitride semiconductor region(104), and p nitride semiconductor region(108) is formed on the active layer. The AlGaN layer of the p-doped GaN layer and p-doped or the undoped are laminated alternately, and the AlGaN layer has the thickness more than 20nm. The substrate(101) is arranged under the n nitride semiconductor region. N-electrode(105) is arranged in order to be electrically connected to the n nitride semiconductor region.