| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to block the diffusion of a metal wiring by forming a diffusion barrier on a contact plug. A lower- contact pulg(105) is formed within a first insulating layer(102) formed on a semiconductor substrate(100). The second insulating layer(106) is formed on an overall structure including the contact plug, and the second insulating layer is etched and the damascene structure in which the top of the lower- contact pulg is exposed is molded. An opening of a void is etched so that it is wider than the center of the void, and the first diffusion barrier layer(104) is formed along the surface of the lower-contact pulg.
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