| 摘要 |
An etching composition is provided to implement selective etching by minimizing the damage of electrolytically plated copper and removing electroless plated copper which is a seed layer, thereby being used for flash etching of a semi-additive process. An etching composition comprises hydrogen peroxide and sulfuric acid, and further etching additive. The etching additive is obtained by adding alkylamine of chemical formula 1: R^1-NH2, aryl sulfonic acid of chemical formula 1: R^2-SO3H, and a compound of chemical formula 3 to water. In chemical formulas, R^1 is C1~C6 linear or branched alkyl, R^2 is phenyl or the phenyl substituted with C1~C6 linear or branched alkyl; R^3 is C1~C3 linear or branched alkyl or carboxyl; and R^4 is hydrogen or hydroxyl.
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