| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an Si crystalline semiconductor useful for manufacturing a semiconductor element excellent in crystallinity at 500 deg.C or below by suppressing occurrence of powder in a CVD device, related to manufacturing of an Si semiconductor polycrystal base material. SOLUTION: In the presence of gas having chemical etching characteristics to an Si at 200-500 deg.C, a silane material gas diluted with a carrier gas is thermally activated using a heated base body to form a crystalline semiconductor material whose main component is Si. The flow rate ratio between the gas having chemical etching characteristics and silane material gas (etching characteristics gas/silane material gas) is preferred to be 0.01-1, and the gas having the chemical etching characteristics is selected among such halogen as fluoride, chlorine, and bromine, such halogen fluoride as ClF3, ClF, BrF3, and BrF, NF3, or their mixture.</p> |
