| 摘要 |
<p>A low-loss surface acoustic wave resonator which is less affected by spurious responses over a wider temperature range and in which the IDT electrode is protected by formation of a SiO 2 film is provided. A surface acoustic wave resonator (1) includes a rotated Y-cut quartz substrate (2) with a cut angle ¸ of -53° to -52° and an IDT electrode (3) composed of aluminum or an alloy mainly composed of aluminum formed on the quartz substrate. The propagation direction of surface acoustic waves is within the range of 90° ±5° with respect to the X axis. A SiO 2 film (6) covers the quartz substrate (2) and the IDT electrode (3). The thickness of the IDT electrode (3) is in the range of 6.0% to 6.5% of », where » is the wavelength of surface acoustic waves, and the duty ratio of the IDT electrode (3) is in the range of 0.62 to 0.66.</p> |
