| 摘要 |
A plasma processing system equipped with a hemi-spherical spiral antenna is provided to generate stable plasma by reducing the inductance inside of the antenna. A space opened upward is formed inside a lower chamber(100), and an upper chamber(200) is formed with a hemi spherical grain cut down with the top end portion edge. A wafer is mounted on a chuck(300) which is installed at the internal space of the lower chamber. The antenna(500) is installed along the outer circumference on the coil type, and an RF frequency supply unit(600) supplies a RF frequency to the antenna.
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