| 摘要 |
An apparatus and a method for processing substrate are provided to secure a process uniformity by diffusing radical towards the plasma source gas by using a diffusing plate. In an apparatus and a method for processing substrate, a chamber(10) provides a process space to a substrate(W). The first supply member supplies a first source gas to the process space, and plasma sources(16,18) produce a radical from a first source gas by forming the electric field to the process space. The second supply member supplies a second source gas to the substrate, and a chamber comprises a lower chamber(12) in which the top is open while the supporting member in which substrate is settled.
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