发明名称 |
METAL FILLED THROUGH VIA STRUCTURE FOR PROVIDING VERTICAL WAFER-TO WAFER INTERCONNECTION |
摘要 |
A method of fabricating a through via connection useful in providing a vertical wafer-to-wafer interconnect structure is provided as well as the vertical interconnect structure that is formed by this method. The method of the present invention using only a metal stud for the vertical connection therefore no alpha radiation is generated by the metal stud. The method of the present invention includes an inserting step, a heating step, a thinning step and backside processing. |
申请公布号 |
EP2047500(A4) |
申请公布日期 |
2009.08.26 |
申请号 |
EP20070853503 |
申请日期 |
2007.07.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
POGGE, H., BERNHARD;YU, ROY, R. |
分类号 |
H01L21/60;H01L21/768;H01L25/065 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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