SEMICONDUCTOR MEMORY ELEMENT

摘要

A semiconductor memory device is provided to remarkably improve the memory capacity of the semiconductor memory device by forming the bigger charge storage density. A tunnel insulating layer(12) is formed on a semiconductor substrate(11). A HfON charge trapping layer(13) has the formed Bevan cluster on the tunnel insulating layer. A shielding layer(14) is formed on the HfON charge trapping layer. A gate electrode(15) is formed on the shielding layer. The semiconductor substrate is the silicon substrate and the tunnel insulating layer is the SiON tunnel insulating layer. The SiON tunnel insulating layer comprises the Hf element.