| 摘要 |
<p>A mark structure for coarse wafer alignment and a method for manufacturing the mark structure are provided to obtain the location of mark through the pattern recognition procedure by searching the scan data signal about the signal part. A mark structure(M) comprises lines(M1,M2,M3,M4 and M5) of N. The mark structure is arranged within the scribe lane of the substrate(100). The first subset of a plurality of lines is positioned within the first layer of the top of the substrate. The second sub set of a plurality of lines is positioned within the second layer(104) on the first layer(102). The second sub set of a plurality of lines is materially put on the line corresponding to the first subset of a plurality of lines. The width of the mark structure to the second direction is about 60 micron.</p> |
