| 摘要 |
<p>A fabrication method of contact hole array for a semiconductor memory device is provided to allow a cell region and border area to have uniform height without step by removes the photoresist pattern through a flushing process. A photoresist pattern is molded on a semiconductor substrate(201) in which a gate oxidation film(203), a nitride film(205), and an inter-layer insulating film(209) are successively formed. The inter-layer insulating film of the contact hole forming reserved area is removed through a first etching process, and the nitride surface is exposed. The flushing process is performed and the photoresist pattern is removed. An exposed nitride film and a gate oxidation film are removed through a second etching. A region in the semiconductor substrate used for the contact hole is exposed, and the flushing process performs for 30~90 second.</p> |
