| 摘要 |
A redundancy control circuit of a semiconductor memory device and a redundancy control method are provided to increase an available area of a memory bank area by arranging a fuse set unit in a peripheral circuit redundancy control unit. A peripheral circuit redundancy control unit(30) generates an internal command by buffering and latching an external command. The peripheral circuit redundancy control unit generates the global address by comparing the external address with an output signal of the fuse circuit. A memory bank redundancy control unit(40) receives a global address corresponding to the input of the internal command and selectively activates the redundancy word line or main word line. The fuse circuit is arranged in the peripheral circuit redundancy control unit. The global address includes the information about the repair operation.
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