PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING NOISE ON WORDLINE

摘要

A phase change memory device is provided to reduce power consumption and to increase a sensing margin by reducing a parasitic resistance element in a word line. A phase change memory device includes sub word lines(SWL0-SWL7), main word lines(MWL0-MWL2) and sub word line decoders(SWD0-SWD2). The sub word line is arranged in a first layer. The main word line is arranged in a second layer. The main word line is connected to the corresponding sub word line. The sub word line decoder is arranged in the layer different from the second layer. The sub word line decoder is connected to the corresponding sub word line and the corresponding main word line. The sub word line decoder activates the sub word line corresponding to the external address. The sub word line is cut with the fixed length in the region where the corresponding sub word line decoder is arranged so that the main word line is connected to the sub word line decoder. A jump contact connects the cut sub word lines.